kw.\*:("COMPOSE III V")
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STRUCTURE CRISTALLINE DES PHASES ORDONNEES A BASE DE COMPOSES SEMICONDUCTEURS DU TYPE AIIIBVVERNER VD; NICHUGOVSKIJ DK.1974; FIZ. TVERD. TELA; S.S.S.R.; DA. 1974; VOL. 16; NO 5; PP. 1503-1504; BIBL. 4 REF.Article
TANK-MISCING METHODS FOR PRODUCING TIME-VARYING REACTIVE GAS MIXTURES FOR CHEMICAL VAPOR DEPOSITION.DONAGHEY LF; SHAIKH SA.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 1; PP. 69-75; BIBL. 12 REF.Article
LES IMPURETES ET LEUR INTERACTION DANS LES CRISTAUX DE SILICIUM, DE GERMANIUM ET LES CRISTAUX AIIIBVBORISOVA LA.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 111-126; BIBL. 1 P. 1/2Article
CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT SOURCESSU CB; OLSHANSKY R.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 833-835; BIBL. 9 REF.Article
2004 international conference on indium phosphide and related materials (16th IPRM, conference proceedings)International Conference on Indium Phosphide and Related Materials. 2004, isbn 0-7803-8595-0, 1Vol, XIV-778 p, isbn 0-7803-8595-0Conference Proceedings
Gallium nitride materials and devices II (22-25 January 2007, San Jose, California, USA)Morkoç, Hadis; Litton, Cole W.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6586-3, 1Vol, various pagings, isbn 978-0-8194-6586-3Conference Proceedings
Internal strain and photoelastic effects in Ga1-xAlxAs/GaAs and In1-xGaxAsyP1-yADACHI, S; OE, K.Journal of applied physics. 1983, Vol 54, Num 11, pp 6620-6627, issn 0021-8979Article
DISPERSION DES EXCITONS INDIRECTS DANS LES CRISTAUX CUBIQUES: COMPOSES SEMI-CONDUCTEURS AIIIBVGLINSKIJ GF; KOPYLOV AA.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 11; PP. 3238-3245; BIBL. 21 REF.Article
KOVALENTE TETRAEDRISCHE RADIEN, RUMPFRADIEN UND GITTERANPASSUNG. = RAYONS COVALENTS TETRAEDRIQUES, RAYONS DES COUCHES ET AJUSTEMENT DU RESEAUHUBNER K.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 8; PP. 865-871; ABS. ANGL.; BIBL. 21 REF.Article
ANALYSIS OF NATIVE OXIDE FILMS AND OXIDE-SUBSTRATE REACTIONS ON III-V SEMICONDUCTORS USING THERMOCHEMICAL PHASE DIAGRAMSSCHWARTZ GP.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 3-16; BIBL. 29 REF.Article
BAND-TO-BAND AUGER EFFECT IN LONG WAVELENGTH MULTINARY III-V ALLOY SEMICONDUCTOR LASERSSUGIMURA A.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 3; PP. 352-363; BIBL. 50 REF.Article
THE CHEMICAL POLISHING OF SEMICONDUCTORS.TUCK B.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 2; PP. 321-339; BIBL. 1 P. 1/2Article
VAPOR PHASE EQUILIBRIA IN THE SYSTEMS IN-INCL3 AND GA-GACL3.KUNIYA Y; HOSAKA M.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 3; PP. 385-391; BIBL. 19 REF.Article
ZUR RELATIVEN STABILITAET DER ZINKBLENDE- UND WURTZIT-STRUKTUR IN EPITAXIESCHICHTEN. = STABILITE RELATIVE DES STRUCTURES BLENDE (ZN) ET WURTZITE DANS LES COUCHES EPITAXIQUESKUHN G; HUBNER K; DAWERITZ L et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 8; PP. K73-K75; BIBL. 8 REF.Article
ROLE OF DANGLING BONDS AND ANTISITE DEFECTS IN RAPID AND GRADUAL III-V LASER DEGRADATIONDOW JD; ALLEN RE.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 672-674; BIBL. 21 REF.Article
ETUDE DE LA CARACTERISATION PAR TOPOLUMINESCENCE D'ALLIAGES III-V TERNAIRES ET QUATERNAIRESMARCHETAUX JEAN CLAUDE.1979; ; FRA; DA. 1979; 96 P.-PL.; 30 CM; BIBL. 55 REF.; TH. DOCT.-ING.: MATIERES RAYONNEM./CAEN/1979Thesis
ELECTRON TRANSPORT IN INVERSION AND ACCUMULATION LAYERS OF III-IV COMPOUNDSGOODNICK SM; FERRY DK.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 27-46; BIBL. 107 REF.Article
Etude expérimentale des propriétés de transport non stationnaire dans InP par photoconduction = Experimental study of non stationary transport properties in InP by photoconductionDe Carre, Patrice; Laval, Suzanne.1990, 202 p.Thesis
Zero-current voltage oscillations in GaAs-AlGaAs heterojunctionsGRASSIE, A. D. C; LAKRIMI, M; HUTCHINGS, K. M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 983-987, issn 0268-1242Article
Etude d'une nouvelle technique de diffusion dans les semi-conducteurs III-V et application à la réalisation de composants optoélectroniques = Development of new technology for diffusion in III. V semiconductors; application to optoelectronic devices realizationLAUNAY, François.1984, 162 pThesis
III-V Semiconductor integrated circuits: a perspectiveMANDAL, R. P.Solid state technology. 1982, Vol 25, Num 1, pp 94-103, issn 0038-111XArticle
GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article
Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article
Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsROCKETT, P. I.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1573-1579, issn 0018-9383Article
The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction materialHUTCHINGS, K. M; GRASSIE, A. D. C; LAKRIMI, M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1057-1059, issn 0268-1242Article